? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 96 a i ar t c = 25 c24a e ar t c = 25 c 30mj e as 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.20 0.24 ? pulse test, t 300 s, duty cycle d 2 % to-247 ad (ixfh) g = gate d = drain s = source tab = drain power mosfets q-class to-268 (d3) ( ixft) (tab) g s v dss = 500 v i d25 = 24 a r ds(on) = 0.24 ? ? ? ? ? ixth 24n50q ixtt 24n50q (tab) advanced technical information ds99067(07/03)
ixys reserves the right to change limits, test conditions, and dimensions. ixth 24n50q ixtt 24n50q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 14 19 s c iss 3000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 410 pf c rss 110 pf t d(on) 16 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 ns t d(off) r g = 2.0 ? (external), 46 n s t f 11 ns q g(on) 82 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 nc q gd 36 nc r thjc 0.35 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24 a i sm repetitive; pulse width limited by t jm 96 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 500 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 6.0 c to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2003 ixys all rights reserved ixth 24n50q ixtt 24n50q fig. 2. extended output characteristics @ 25 deg. c 0 6 12 18 24 30 36 42 48 54 60 0 5 10 15 20 25 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 3 6 9 12 15 18 21 24 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 24a i d = 12a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.5 1 1.5 2 2.5 3 3.5 0 1224 364860 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixth 24n50q ixtt 24n50q ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 2 4 6 8 10 0 20406080 q g - nanocoulombs v g s - volts v ds = 250v i d = 12a i g = 10ma fig. 7. input admittance 0 6 12 18 24 30 36 42 3.544.555.566.57 v g s - volts i d - amperes t j = 120oc 25oc -40oc fig. 12. maxim um transient therm al resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 0 6 12 18 24 30 36 42 48 54 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 12 24 36 48 60 72 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125oc t j = 25oc
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